A graphene-based hot electron transistor.

Conduction coefficient modeling in bilayer graphene based on schottky transistors

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

Graphene Hot-electron Transistors

Supporting Information Vertical Graphene-Base Hot-Electron Transistor

1. The common-base emitter current In hot-electron transistors, the emitter/base junction should allow the injection of electrons into the graphene base. The emitter current is the source of all the electrons injected into the graphene base and it consists of two components: one component is due to Fowler-Nordheim tunneling, and the other component is due to thermionic emission (e.g. the curren...

Multi-finger flexible graphene field effect transistors with high bendability

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Dual-mode operation of 2D material-base hot electron transistors

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary ...